2SC5226A-4-TL-E
- Mfr.Part #
- 2SC5226A-4-TL-E
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- RF TRANS NPN 10V 7GHZ 3MCP
- Stock
- 5,862
- In Stock :
- 5,862
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Highest Frequency Band :
- ULTRA HIGH FREQUENCY B
- Package / Case :
- SC-70, SOT-323
- Width :
- 1.25mm
- HTS Code :
- 8541.21.00.75
- Gain :
- 12dB
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Height :
- 900μm
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Published :
- 2011
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- JESD-609 Code :
- e6
- Max Collector Current :
- 70mA
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 10V
- Collector Emitter Breakdown Voltage :
- 10V
- Collector Base Voltage (VCBO) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Transition Frequency :
- 7000MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector-Base Capacitance-Max :
- 1.2pF
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 90 @ 20mA 5V
- Gain Bandwidth Product :
- 7 GHz
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 150mW
- Transistor Type :
- NPN
- Additional Feature :
- LOW NOISE
- Terminal Position :
- Dual
- Length :
- 2mm
- Pin Count :
- 3
- Max Breakdown Voltage :
- 10V
- Surface Mount :
- yes
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 2V
- Number of Elements :
- 1
- Max Frequency :
- 7GHz
- Noise Figure (dB Typ @ f) :
- 1dB @ 1GHz
- Datasheets
- 2SC5226A-4-TL-E

2SC5226A-4-TL-E datasheet pdf and Transistors - Bipolar (BJT) - RF product details from ON Semiconductor stock available at
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