2SC4618TLP
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- Mfr.Part #
- 2SC4618TLP
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- RF TRANS NPN 25V 300MHZ EMT3
- Stock
- 41,731
- In Stock ：
- 41,731
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 100mV
- Max Breakdown Voltage :
- 25V
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- SC-75, SOT-416
- Mount :
- Surface Mount
- Contact Plating :
- Copper, Silver, Tin
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 40V
- Factory Lead Time :
- 13 Weeks
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 25V
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Continuous Collector Current :
- 50mA
- Gain Bandwidth Product :
- 300MHz
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Max Collector Current :
- 50mA
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Transition Frequency :
- 300MHz
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2004
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current Rating :
- 50mA
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- 2SC4618
- Terminal Position :
- Dual
- Frequency :
- 300MHz
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation :
- 150mW
- Collector Emitter Breakdown Voltage :
- 25V
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 150mW
- Voltage - Rated DC :
- 25V
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- hFE Min :
- 82
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 1mA 6V
- Datasheets
- 2SC4618TLP
2SC4618TLP Documents
2SC4618TLP datasheet pdf and Transistors - Bipolar (BJT) - RF product details from ROHM Semiconductor stock available at
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