2SAR587D3TL1
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- Mfr.Part #
- 2SAR587D3TL1
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 120V 3A TO252
- Stock
- 1,976
- In Stock ：
- 1,976
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Collector (Ic) (Max) :
- 3A
- Frequency - Transition :
- 250MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- Voltage - Collector Emitter Breakdown (Max) :
- 120V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 5V
- Factory Lead Time :
- 13 Weeks
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Power - Max :
- 10W
- Datasheets
- 2SAR587D3TL1
PNP 150°C TJ 1μA ICBO TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SAR587D3TL1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 5V.When VCE saturation is 200mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).The device has a 120V maximal voltage - Collector Emitter Breakdown.
2SAR587D3TL1 Features
the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 200mV @ 100mA, 1A
2SAR587D3TL1 Applications
There are a lot of ROHM Semiconductor
2SAR587D3TL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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