2SAR502EBTL
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- Mfr.Part #
- 2SAR502EBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.5A EMT3F
- Stock
- 80
- In Stock ：
- 80
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 200
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Base Voltage (VCBO) :
- -30V
- Package / Case :
- SC-89, SOT-490
- Transistor Type :
- PNP
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 10mA, 200mA
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Breakdown Voltage :
- 30V
- Emitter Base Voltage (VEBO) :
- -6V
- Weight :
- 29.993795mg
- Reach Compliance Code :
- not_compliant
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 400mV
- Power - Max :
- 150mW
- Max Power Dissipation :
- 150mW
- Factory Lead Time :
- 13 Weeks
- Current - Collector Cutoff (Max) :
- 200nA ICBO
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 500mA
- Gain Bandwidth Product :
- 520MHz
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- -150mV
- Published :
- 2015
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2SAR502EBTL
PNP 150°C TJ 200nA ICBO SC-89, SOT-490 Tape & Reel (TR) Surface Mount
2SAR502EBTL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -150mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 10mA, 200mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 500mA volts.
2SAR502EBTL Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 10mA, 200mA
the emitter base voltage is kept at -6V
2SAR502EBTL Applications
There are a lot of ROHM Semiconductor
2SAR502EBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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