2SAR502EBTL
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- Mfr.Part #
- 2SAR502EBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.5A EMT3F
- Stock
- 80
- In Stock ：
- 80
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 200nA ICBO
- Max Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- -6V
- Power - Max :
- 150mW
- Weight :
- 29.993795mg
- hFE Min :
- 200
- Max Power Dissipation :
- 150mW
- Collector Emitter Saturation Voltage :
- -150mV
- Element Configuration :
- Single
- Package / Case :
- SC-89, SOT-490
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Type :
- PNP
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 13 Weeks
- Collector Base Voltage (VCBO) :
- -30V
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 400mV
- Reach Compliance Code :
- not_compliant
- Mount :
- Surface Mount
- Published :
- 2015
- Gain Bandwidth Product :
- 520MHz
- Max Collector Current :
- 500mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 10mA, 200mA
- Datasheets
- 2SAR502EBTL
2SAR502EBTL Documents
PNP 150°C TJ 200nA ICBO SC-89, SOT-490 Tape & Reel (TR) Surface Mount
2SAR502EBTL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -150mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 10mA, 200mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 500mA volts.
2SAR502EBTL Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 10mA, 200mA
the emitter base voltage is kept at -6V
2SAR502EBTL Applications
There are a lot of ROHM Semiconductor
2SAR502EBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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