2SAR502U3T106
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- Mfr.Part #
- 2SAR502U3T106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.5A UMT3
- Stock
- 71
- In Stock ：
- 71
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- SC-70, SOT-323
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 10mA, 200mA
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 13 Weeks
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 200nA ICBO
- Frequency - Transition :
- 520MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Current - Collector (Ic) (Max) :
- 500mA
- Power - Max :
- 200mW
- Datasheets
- 2SAR502U3T106
PNP 150°C TJ 200nA ICBO SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SAR502U3T106 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.When VCE saturation is 400mV @ 10mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 30V maximal voltage - Collector Emitter Breakdown.
2SAR502U3T106 Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 10mA, 200mA
2SAR502U3T106 Applications
There are a lot of ROHM Semiconductor
2SAR502U3T106 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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