2SAR502UBTL
- Mfr.Part #
- 2SAR502UBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-85
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.5A UMT3F
- Stock
- 2,872
- In Stock :
- 2,872
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 520MHz
- Max Power Dissipation :
- 200mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 400mV
- Published :
- 2015
- Collector Emitter Saturation Voltage :
- -150mV
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Continuous Collector Current :
- -500mA
- hFE Min :
- 200
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 30V
- Package / Case :
- SC-85
- Max Collector Current :
- 500mA
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 85
- Collector Base Voltage (VCBO) :
- -30V
- Factory Lead Time :
- 13 Weeks
- Power - Max :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 10mA, 200mA
- Emitter Base Voltage (VEBO) :
- -6V
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 200nA ICBO
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Reach Compliance Code :
- not_compliant
- Datasheets
- 2SAR502UBTL

PNP 150°C TJ 200nA ICBO SC-85 Tape & Reel (TR) Surface Mount
2SAR502UBTL Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.The collector emitter saturation voltage is -150mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 10mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -500mA for high efficiency.Emitter base voltages of -6V can achieve high levels of efficiency.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
2SAR502UBTL Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 10mA, 200mA
the emitter base voltage is kept at -6V
2SAR502UBTL Applications
There are a lot of ROHM Semiconductor
2SAR502UBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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