2SAR502UBTL

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Mfr.Part #
2SAR502UBTL
Manufacturer
ROHM Semiconductor
Package / Case
SC-85
Datasheet
Download
Description
TRANS PNP 30V 0.5A UMT3F
Stock
2,872
In Stock :
2,872

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Gain Bandwidth Product :
520MHz
Max Power Dissipation :
200mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Collector Emitter Voltage (VCEO) :
400mV
Published :
2015
Collector Emitter Saturation Voltage :
-150mV
Lead Free :
Lead Free
Transistor Type :
PNP
Continuous Collector Current :
-500mA
hFE Min :
200
Contact Plating :
Tin
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 2V
Mounting Type :
Surface Mount
Max Breakdown Voltage :
30V
Package / Case :
SC-85
Max Collector Current :
500mA
Operating Temperature :
150°C TJ
Number of Pins :
85
Collector Base Voltage (VCBO) :
-30V
Factory Lead Time :
13 Weeks
Power - Max :
200mW
Vce Saturation (Max) @ Ib, Ic :
400mV @ 10mA, 200mA
Emitter Base Voltage (VEBO) :
-6V
Element Configuration :
Single
Current - Collector Cutoff (Max) :
200nA ICBO
Packaging :
Tape and Reel (TR)
Collector Emitter Breakdown Voltage :
30V
Mount :
Surface Mount
ECCN Code :
EAR99
Reach Compliance Code :
not_compliant
Datasheets
2SAR502UBTL
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SAR502UBTL from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:SC-85, Operating Temperature:150°C TJ, Number of Pins:85, 2SAR502UBTL pinout, 2SAR502UBTL datasheet PDF, 2SAR502UBTL amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SAR502UBTL ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor 2SAR502UBTL


PNP 150°C TJ 200nA ICBO SC-85 Tape & Reel (TR) Surface Mount

2SAR502UBTL Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.The collector emitter saturation voltage is -150mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 10mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -500mA for high efficiency.Emitter base voltages of -6V can achieve high levels of efficiency.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.

2SAR502UBTL Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 10mA, 200mA
the emitter base voltage is kept at -6V


2SAR502UBTL Applications


There are a lot of ROHM Semiconductor
2SAR502UBTL applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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