2SAR562F3TR

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Mfr.Part #
2SAR562F3TR
Manufacturer
ROHM Semiconductor
Package / Case
3-UDFN Exposed Pad
Datasheet
Download
Description
TRANS PNP 30V 6A HUML2020L3
Stock
2,210
In Stock :
2,210

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Power - Max :
1W
Transistor Application :
SWITCHING
Voltage - Collector Emitter Breakdown (Max) :
30V
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 2V
Package / Case :
3-UDFN Exposed Pad
Operating Temperature :
150°C TJ
Transistor Type :
PNP
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminations :
3
Surface Mount :
yes
Packaging :
Tape and Reel (TR)
Current - Collector (Ic) (Max) :
6A
Current - Collector Cutoff (Max) :
100nA ICBO
Mounting Type :
Surface Mount
Configuration :
Single
Factory Lead Time :
20 Weeks
JESD-30 Code :
R-PDSO-N3
ECCN Code :
EAR99
Polarity/Channel Type :
PNP
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transition Frequency :
180MHz
Frequency - Transition :
180MHz
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
300mV @ 150mA, 3A
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
COLLECTOR
Terminal Position :
Dual
Terminal Form :
NO LEAD
Datasheets
2SAR562F3TR
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SAR562F3TR from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:3-UDFN Exposed Pad, Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Surface Mount, 2SAR562F3TR pinout, 2SAR562F3TR datasheet PDF, 2SAR562F3TR amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SAR562F3TR ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor 2SAR562F3TR


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-UDFN Exposed Pad Tape & Reel (TR) Surface Mount

2SAR562F3TR Overview


In this device, the DC current gain is 200 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 150mA, 3A.180MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 30V.

2SAR562F3TR Features


the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 300mV @ 150mA, 3A
a transition frequency of 180MHz


2SAR562F3TR Applications


There are a lot of ROHM Semiconductor
2SAR562F3TR applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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