2SAR562F3TR

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Mfr.Part #
2SAR562F3TR
Manufacturer
ROHM Semiconductor
Package / Case
3-UDFN Exposed Pad
Datasheet
Download
Description
TRANS PNP 30V 6A HUML2020L3
Stock
2,210
In Stock :
2,210

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Power - Max :
1W
Frequency - Transition :
180MHz
Terminal Position :
Dual
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 2V
JESD-30 Code :
R-PDSO-N3
Configuration :
Single
Transistor Application :
SWITCHING
Vce Saturation (Max) @ Ib, Ic :
300mV @ 150mA, 3A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
COLLECTOR
Transition Frequency :
180MHz
Number of Elements :
1
Transistor Type :
PNP
Transistor Element Material :
SILICON
Operating Temperature :
150°C TJ
Factory Lead Time :
20 Weeks
Current - Collector Cutoff (Max) :
100nA ICBO
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Package / Case :
3-UDFN Exposed Pad
RoHS Status :
ROHS3 Compliant
Surface Mount :
yes
Number of Terminations :
3
Polarity/Channel Type :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Current - Collector (Ic) (Max) :
6A
Voltage - Collector Emitter Breakdown (Max) :
30V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Form :
NO LEAD
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SAR562F3TR from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Package / Case:3-UDFN Exposed Pad, Number of Terminations:3, 2SAR562F3TR pinout, 2SAR562F3TR datasheet PDF, 2SAR562F3TR amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SAR562F3TR ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor 2SAR562F3TR


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-UDFN Exposed Pad Tape & Reel (TR) Surface Mount

2SAR562F3TR Overview


In this device, the DC current gain is 200 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 150mA, 3A.180MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 30V.

2SAR562F3TR Features


the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 300mV @ 150mA, 3A
a transition frequency of 180MHz


2SAR562F3TR Applications


There are a lot of ROHM Semiconductor
2SAR562F3TR applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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