2SAR522UBTL
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- Mfr.Part #
- 2SAR522UBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-85
- Datasheet
- Download
- Description
- TRANS PNP 20V 0.2A UMT3F
- Stock
- 11,924
- In Stock ：
- 11,924
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- -20V
- Collector Emitter Breakdown Voltage :
- 20V
- Number of Elements :
- 1
- Max Power Dissipation :
- 200mW
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 20V
- Factory Lead Time :
- 13 Weeks
- Package / Case :
- SC-85
- Gain Bandwidth Product :
- 350MHz
- Collector Emitter Saturation Voltage :
- -300mV
- Mounting Type :
- Surface Mount
- Continuous Collector Current :
- -200mA
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Transistor Type :
- PNP
- Published :
- 2010
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Flat
- Emitter Base Voltage (VEBO) :
- -5V
- Transition Frequency :
- 350MHz
- Mount :
- Surface Mount
- Terminal Finish :
- TIN SILVER COPPER
- Power - Max :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Max Collector Current :
- 200mA
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 2V
- Collector Emitter Voltage (VCEO) :
- 300mV
- Pin Count :
- 3
- Terminal Position :
- Dual
- Configuration :
- Single
- JESD-30 Code :
- R-PDSO-F3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- hFE Min :
- 120
- Number of Terminations :
- 3
- Number of Pins :
- 85
- Datasheets
- 2SAR522UBTL
2SAR522UBTL Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-85 Tape & Reel (TR) Surface Mount
2SAR522UBTL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.Continuous collector voltages of -200mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 350MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 200mA volts.
2SAR522UBTL Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 350MHz
2SAR522UBTL Applications
There are a lot of ROHM Semiconductor
2SAR522UBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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