2SAR522UBTL
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- Mfr.Part #
- 2SAR522UBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-85
- Datasheet
- Download
- Description
- TRANS PNP 20V 0.2A UMT3F
- Stock
- 11,924
- In Stock ：
- 11,924
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- TIN SILVER COPPER
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 2V
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Flat
- Max Breakdown Voltage :
- 20V
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e1
- Collector Emitter Voltage (VCEO) :
- 300mV
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 20V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Configuration :
- Single
- Factory Lead Time :
- 13 Weeks
- Terminal Position :
- Dual
- JESD-30 Code :
- R-PDSO-F3
- Transition Frequency :
- 350MHz
- Number of Terminations :
- 3
- Number of Pins :
- 85
- Pbfree Code :
- yes
- Max Collector Current :
- 200mA
- Collector Base Voltage (VCBO) :
- -20V
- Emitter Base Voltage (VEBO) :
- -5V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- -200mA
- Gain Bandwidth Product :
- 350MHz
- Power - Max :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- SC-85
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -300mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- Mount :
- Surface Mount
- Published :
- 2010
- Max Power Dissipation :
- 200mW
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- hFE Min :
- 120
- Datasheets
- 2SAR522UBTL
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-85 Tape & Reel (TR) Surface Mount
2SAR522UBTL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.Continuous collector voltages of -200mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 350MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 200mA volts.
2SAR522UBTL Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 350MHz
2SAR522UBTL Applications
There are a lot of ROHM Semiconductor
2SAR522UBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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