2SAR512PT100
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- Mfr.Part #
- 2SAR512PT100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 2A MPT3
- Stock
- 8,037
- In Stock ：
- 8,037
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Terminal Finish :
- TIN COPPER
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 30V
- JESD-609 Code :
- e2
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Power - Max :
- 2W
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 30V
- Terminal Form :
- Flat
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-243AA
- Transition Frequency :
- 430MHz
- Collector Base Voltage (VCBO) :
- -30V
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 2A
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- -200mV
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 400mV
- Reach Compliance Code :
- not_compliant
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 430MHz
- Max Power Dissipation :
- 2W
- Operating Temperature :
- 150°C TJ
- Published :
- 2013
- hFE Min :
- 200
- Emitter Base Voltage (VEBO) :
- -6V
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Factory Lead Time :
- 9 Weeks
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 35mA, 700mA
- Datasheets
- 2SAR512PT100
2SAR512PT100 Documents
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SAR512PT100 Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 35mA, 700mA.Keeping the emitter base voltage at -6V allows for a high level of efficiency.430MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
2SAR512PT100 Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 35mA, 700mA
the emitter base voltage is kept at -6V
a transition frequency of 430MHz
2SAR512PT100 Applications
There are a lot of ROHM Semiconductor
2SAR512PT100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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