2SAR512PT100
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- Mfr.Part #
- 2SAR512PT100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 2A MPT3
- Stock
- 8,037
- In Stock ：
- 8,037
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 30V
- Max Power Dissipation :
- 2W
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Package / Case :
- TO-243AA
- Element Configuration :
- Single
- Published :
- 2013
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 35mA, 700mA
- Gain Bandwidth Product :
- 430MHz
- Terminal Finish :
- TIN COPPER
- Peak Reflow Temperature (Cel) :
- 260
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Base Voltage (VCBO) :
- -30V
- Collector Emitter Saturation Voltage :
- -200mV
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Number of Pins :
- 3
- JESD-609 Code :
- e2
- Emitter Base Voltage (VEBO) :
- -6V
- Qualification Status :
- Not Qualified
- Power - Max :
- 2W
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- Transition Frequency :
- 430MHz
- ECCN Code :
- EAR99
- hFE Min :
- 200
- Collector Emitter Voltage (VCEO) :
- 400mV
- Factory Lead Time :
- 9 Weeks
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Max Collector Current :
- 2A
- Terminal Form :
- Flat
- Datasheets
- 2SAR512PT100
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SAR512PT100 Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 35mA, 700mA.Keeping the emitter base voltage at -6V allows for a high level of efficiency.430MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
2SAR512PT100 Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 35mA, 700mA
the emitter base voltage is kept at -6V
a transition frequency of 430MHz
2SAR512PT100 Applications
There are a lot of ROHM Semiconductor
2SAR512PT100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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