2N6193
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- Mfr.Part #
- 2N6193
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A TO39
- Stock
- 1,612
- In Stock ：
- 1,612
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Radiation Hardening :
- No
- Polarity/Channel Type :
- PNP
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 100V
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 100V
- Published :
- 2002
- Number of Pins :
- 3
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Turn On Time-Max (ton) :
- 200ns
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100μA
- Transistor Element Material :
- SILICON
- Terminal Finish :
- TIN LEAD
- Collector Base Voltage (VCBO) :
- 100V
- Turn Off Time-Max (toff) :
- 2020ns
- Terminal Position :
- BOTTOM
- Pbfree Code :
- No
- Transistor Type :
- PNP
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 2A 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 500mA, 5A
- Operating Temperature :
- -65°C~200°C TJ
- Max Collector Current :
- 5A
- Terminal Form :
- Wire
- JESD-609 Code :
- e0
- Factory Lead Time :
- 12 Weeks
- Max Power Dissipation :
- 1W
- Transistor Application :
- SWITCHING
- Datasheets
- 2N6193
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PNP -65°C~200°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
2N6193 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 2A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 5A volts.
2N6193 Features
the DC current gain for this device is 60 @ 2A 2V
the vce saturation(Max) is 1.2V @ 500mA, 5A
the emitter base voltage is kept at 6V
2N6193 Applications
There are a lot of Microsemi Corporation
2N6193 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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