2N6111

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

2 Weeks

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Collector Base Voltage (VCBO) :

40V

Height :

15.75mm

Max Power Dissipation :

40W

Radiation Hardening :

No

Base Part Number :

2N6111

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 3A 4V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Finish :

Tin (Sn)

Gain Bandwidth Product :

10MHz

Transition Frequency :

10MHz

ECCN Code :

EAR99

Polarity/Channel Type :

PNP

Element Configuration :

Single

Case Connection :

COLLECTOR

REACH SVHC :

No SVHC

Voltage - Rated DC :

-30V

Pin Count :

3

Transistor Element Material :

SILICON

Packaging :

Tube

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2007

hFE Min :

30

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

5V

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

Current Rating :

-7A

Collector Emitter Saturation Voltage :

3.5V

Length :

10.28mm

Lead Free :

Lead Free

Operating Temperature :

-65°C~150°C TJ

Current - Collector Cutoff (Max) :

1mA

Package / Case :

TO-220-3

Collector Emitter Voltage (VCEO) :

30V

Transistor Application :

SWITCHING

Transistor Type :

PNP

Frequency :

10MHz

Vce Saturation (Max) @ Ib, Ic :

3.5V @ 3A, 7A

Max Collector Current :

7A

Number of Terminations :

3

Width :

4.82mm

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

30V

Power Dissipation :

40W

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)