2N6109

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Mfr.Part #
2N6109
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 50V 7A TO220
Stock
4,389
In Stock :
4,389

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Gain Bandwidth Product :
10MHz
Factory Lead Time :
2 Weeks
Height :
15.75mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Number of Pins :
3
Transistor Application :
SWITCHING
Element Configuration :
Single
Polarity/Channel Type :
PNP
Pin Count :
3
Surface Mount :
No
Emitter Base Voltage (VEBO) :
5V
Current - Collector Cutoff (Max) :
1mA
JEDEC-95 Code :
TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 2.5A 4V
Max Collector Current :
7A
Packaging :
Tube
Base Part Number :
2N6109
Pbfree Code :
yes
Collector Emitter Voltage (VCEO) :
50V
Current Rating :
7A
Collector Base Voltage (VCBO) :
60V
Transistor Element Material :
SILICON
Weight :
4.535924g
Transistor Type :
PNP
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
40
Case Connection :
COLLECTOR
Voltage - Rated DC :
-50V
Radiation Hardening :
No
Lead Free :
Lead Free
Frequency :
10MHz
Power Dissipation :
40W
Transition Frequency :
10MHz
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Collector Emitter Breakdown Voltage :
50V
Max Power Dissipation :
40W
Published :
2003
Operating Temperature :
-65°C~150°C TJ
Package / Case :
TO-220-3
REACH SVHC :
No SVHC
Peak Reflow Temperature (Cel) :
260
Collector Emitter Saturation Voltage :
3.5V
Width :
4.82mm
Number of Elements :
1
Length :
10.28mm
Vce Saturation (Max) @ Ib, Ic :
3.5V @ 3A, 7A
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
hFE Min :
30
Contact Plating :
Tin
ECCN Code :
EAR99
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. 2N6109 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:2N6109, Mounting Type:Through Hole, Operating Temperature:-65°C~150°C TJ, Package / Case:TO-220-3, Number of Terminations:3, 2N6109 pinout, 2N6109 datasheet PDF, 2N6109 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. 2N6109 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. 2N6109


PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole

2N6109G Overview


In this device, the DC current gain is 30 @ 2.5A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 3A, 7A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 7A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Single BJT transistor is possible for the collector current to fall as low as 7A volts at Single BJT transistors maximum.

2N6109G Features


the DC current gain for this device is 30 @ 2.5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is 7A
a transition frequency of 10MHz


2N6109G Applications


There are a lot of ON Semiconductor
2N6109G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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