2N6109
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- Mfr.Part #
- 2N6109
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 7A TO220
- Stock
- 4,389
- In Stock ：
- 4,389
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-220-3
- hFE Min :
- 30
- Max Power Dissipation :
- 40W
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 2.5A 4V
- Factory Lead Time :
- 2 Weeks
- Power Dissipation :
- 40W
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 50V
- Gain Bandwidth Product :
- 10MHz
- Peak Reflow Temperature (Cel) :
- 260
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Height :
- 15.75mm
- JEDEC-95 Code :
- TO-220AB
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 3.5V
- Voltage - Rated DC :
- -50V
- Frequency :
- 10MHz
- Transition Frequency :
- 10MHz
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 50V
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Packaging :
- Tube
- Operating Temperature :
- -65°C~150°C TJ
- Pin Count :
- 3
- Base Part Number :
- 2N6109
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 7A
- Current Rating :
- 7A
- Length :
- 10.28mm
- Collector Base Voltage (VCBO) :
- 60V
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 1mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Published :
- 2003
- Mounting Type :
- Through Hole
- Weight :
- 4.535924g
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 3A, 7A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Width :
- 4.82mm
- ECCN Code :
- EAR99
- Datasheets
- 2N6109
PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
2N6109G Overview
In this device, the DC current gain is 30 @ 2.5A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 3A, 7A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 7A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Single BJT transistor is possible for the collector current to fall as low as 7A volts at Single BJT transistors maximum.
2N6109G Features
the DC current gain for this device is 30 @ 2.5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is 7A
a transition frequency of 10MHz
2N6109G Applications
There are a lot of ON Semiconductor
2N6109G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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