2N6109
- Mfr.Part #
- 2N6109
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 7A TO220
- Stock
- 4,389
- In Stock :
- 4,389
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 10MHz
- Factory Lead Time :
- 2 Weeks
- Height :
- 15.75mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Surface Mount :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 1mA
- JEDEC-95 Code :
- TO-220AB
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 2.5A 4V
- Max Collector Current :
- 7A
- Packaging :
- Tube
- Base Part Number :
- 2N6109
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 50V
- Current Rating :
- 7A
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Element Material :
- SILICON
- Weight :
- 4.535924g
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Case Connection :
- COLLECTOR
- Voltage - Rated DC :
- -50V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Frequency :
- 10MHz
- Power Dissipation :
- 40W
- Transition Frequency :
- 10MHz
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Collector Emitter Breakdown Voltage :
- 50V
- Max Power Dissipation :
- 40W
- Published :
- 2003
- Operating Temperature :
- -65°C~150°C TJ
- Package / Case :
- TO-220-3
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 3.5V
- Width :
- 4.82mm
- Number of Elements :
- 1
- Length :
- 10.28mm
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 3A, 7A
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 30
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Datasheets
- 2N6109
2N6109 Documents

PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
2N6109G Overview
In this device, the DC current gain is 30 @ 2.5A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 3A, 7A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 7A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Single BJT transistor is possible for the collector current to fall as low as 7A volts at Single BJT transistors maximum.
2N6109G Features
the DC current gain for this device is 30 @ 2.5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is 7A
a transition frequency of 10MHz
2N6109G Applications
There are a lot of ON Semiconductor
2N6109G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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