2N6109G
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- Mfr.Part #
- 2N6109G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 7A TO220
- Stock
- 9,221
- In Stock ：
- 9,221
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 50V
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 10MHz
- Power Dissipation :
- 40W
- Transistor Element Material :
- SILICON
- Weight :
- 4.535924g
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Surface Mount :
- No
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- hFE Min :
- 30
- Element Configuration :
- Single
- Base Part Number :
- 2N6109
- Current - Collector Cutoff (Max) :
- 1mA
- Width :
- 4.82mm
- Case Connection :
- COLLECTOR
- Collector Emitter Saturation Voltage :
- 3.5V
- Pin Count :
- 3
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 3A, 7A
- Number of Terminations :
- 3
- Height :
- 15.75mm
- JEDEC-95 Code :
- TO-220AB
- Published :
- 2003
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 7A
- Pbfree Code :
- yes
- Package / Case :
- TO-220-3
- Voltage - Rated DC :
- -50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 40W
- Factory Lead Time :
- 2 Weeks
- Frequency :
- 10MHz
- Gain Bandwidth Product :
- 10MHz
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Packaging :
- Tube
- Length :
- 10.28mm
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -65°C~150°C TJ
- Current Rating :
- 7A
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 2.5A 4V
- Collector Emitter Breakdown Voltage :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2N6109G
PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
2N6109G Overview
In this device, the DC current gain is 30 @ 2.5A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 3A, 7A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 7A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Single BJT transistor is possible for the collector current to fall as low as 7A volts at Single BJT transistors maximum.
2N6109G Features
the DC current gain for this device is 30 @ 2.5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is 7A
a transition frequency of 10MHz
2N6109G Applications
There are a lot of ON Semiconductor
2N6109G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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