2N6111G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

260

Surface Mount :

No

Max Power Dissipation :

40W

Emitter Base Voltage (VEBO) :

5V

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

40V

Frequency :

10MHz

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

-7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Mounting Type :

Through Hole

Radiation Hardening :

No

Height :

15.75mm

Width :

4.82mm

Collector Emitter Voltage (VCEO) :

30V

Packaging :

Tube

Collector Emitter Breakdown Voltage :

30V

Factory Lead Time :

2 Weeks

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Current - Collector Cutoff (Max) :

1mA

Operating Temperature :

-65°C~150°C TJ

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

3.5V @ 3A, 7A

Power Dissipation :

40W

Transistor Type :

PNP

Case Connection :

COLLECTOR

Package / Case :

TO-220-3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Collector Emitter Saturation Voltage :

3.5V

Length :

10.28mm

Transition Frequency :

10MHz

Transistor Element Material :

SILICON

Pin Count :

3

Max Collector Current :

7A

Transistor Application :

SWITCHING

Gain Bandwidth Product :

10MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 3A 4V

hFE Min :

30

Element Configuration :

Single

ECCN Code :

EAR99

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Voltage - Rated DC :

-30V

Base Part Number :

2N6111

Published :

2007

Polarity/Channel Type :

PNP