2N6111G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Factory Lead Time :

2 Weeks

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

5V

Power Dissipation :

40W

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

3.5V @ 3A, 7A

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Width :

4.82mm

Collector Emitter Voltage (VCEO) :

30V

Collector Base Voltage (VCBO) :

40V

Pbfree Code :

yes

Number of Pins :

3

Package / Case :

TO-220-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 3A 4V

Transistor Type :

PNP

Radiation Hardening :

No

Transition Frequency :

10MHz

Peak Reflow Temperature (Cel) :

260

Length :

10.28mm

Max Collector Current :

7A

RoHS Status :

ROHS3 Compliant

hFE Min :

30

Frequency :

10MHz

Pin Count :

3

ECCN Code :

EAR99

Voltage - Rated DC :

-30V

Case Connection :

COLLECTOR

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

2N6111

Surface Mount :

No

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Element Material :

SILICON

Published :

2007

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Current - Collector Cutoff (Max) :

1mA

Height :

15.75mm

Polarity/Channel Type :

PNP

Current Rating :

-7A

Gain Bandwidth Product :

10MHz

Collector Emitter Breakdown Voltage :

30V

Element Configuration :

Single

Max Power Dissipation :

40W

Operating Temperature :

-65°C~150°C TJ

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Collector Emitter Saturation Voltage :

3.5V

Terminal Finish :

Tin (Sn)