2N6188

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain-Min (hFE) :

30

Collector Current-Max (IC) :

10 A

Collector-Emitter Voltage-Max :

100 V

Brand :

Microchip Technology

Series :

-

Transistor Element Material :

SILICON

Product Category :

Bipolar Transistors - BJT

Frequency - Transition :

-

Mounting Type :

Stud Mount

Subcategory :

Transistors

Terminal Position :

UPPER

Supplier Device Package :

TO-59

Surface Mount :

No

VCEsat-Max :

1.2 V

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 100μA, 2mA

Package :

Bulk

Transistor Polarity :

PNP

Polarity/Channel Type :

PNP

Number of Elements :

1

Number of Terminals :

4

JEDEC-95 Code :

TO-111

JESD-30 Code :

O-MUPM-D4

Transistor Type :

PNP

Qualification Status :

Not Qualified

Terminal Form :

Solder Lug

Package / Case :

TO-210AA, TO-59-4, Stud

Product Type :

BJTs - Bipolar Transistors

Product Status :

Active

Manufacturer :

Microchip

Technology :

Si

Case Connection :

Isolated

Reach Compliance Code :

Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

ECCN Code :

EAR99

Package Shape :

Round

Voltage - Collector Emitter Breakdown (Max) :

100 V

Current - Collector (Ic) (Max) :

10 A

Operating Temperature :

-65°C ~ 200°C (TJ)

Configuration :

Single

Current - Collector Cutoff (Max) :

-

Power Dissipation-Max (Abs) :

60 W

Power - Max :

60 W