2N5770

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Voltage (VCEO) :

15V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DC Current Gain-Min (hFE) :

50

Polarity :

NPN

Collector Base Voltage (VCBO) :

30V

Power Dissipation-Max :

625mW

Published :

2008

RoHS Status :

RoHS Compliant

JESD-609 Code :

e0

Number of Terminations :

3

Gain Bandwidth Product :

900MHz

Emitter Base Voltage (VEBO) :

3V

JESD-30 Code :

O-PBCY-T3

Terminal Position :

BOTTOM

Frequency - Transition :

900MHz

Pbfree Code :

No

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Mount :

Through Hole

Max Collector Current :

50mA

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Emitter Saturation Voltage :

400mV

Terminal Finish :

Tin/Lead (Sn/Pb)

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

15V

Continuous Collector Current :

50mA

Max Operating Temperature :

150°C

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Package / Case :

TO-92

Transition Frequency :

900MHz

Collector-Base Capacitance-Max :

1.7pF

Qualification Status :

Not Qualified

Number of Elements :

1

hFE Min :

20

Min Operating Temperature :

-65°C

HTS Code :

8541.21.00.75