2N4957UB

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transition Frequency :

1200MHz

Noise Figure (dB Typ @ f) :

3.5dB @ 450MHz

Current - Collector (Ic) (Max) :

30mA

Transistor Application :

AMPLIFIER

Terminal Finish :

Tin/Lead (Sn/Pb)

Factory Lead Time :

24 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Packaging :

Bulk

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 10V

JESD-609 Code :

e0

Transistor Type :

PNP

Number of Terminations :

3

Additional Feature :

LOW NOISE

Operating Temperature :

-65°C~200°C TJ

Mounting Type :

Surface Mount

JESD-30 Code :

R-CDSO-N3

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

30V

Terminal Position :

Dual

Power Dissipation-Max (Abs) :

0.2W

ECCN Code :

EAR99

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Polarity/Channel Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

200mW

Collector-Base Capacitance-Max :

0.8pF

HTS Code :

8541.21.00.95

Transistor Element Material :

SILICON

Gain :

25dB

Configuration :

Single

Package / Case :

3-SMD, No Lead

Surface Mount :

yes

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED