2N2369

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Mfr.Part #
2N2369
Manufacturer
Microchip Technology
Package / Case
TO-206AA, TO-18-3 Metal Can
Datasheet
Download
Description
SMALL-SIGNAL BJT
Stock
9,684
In Stock :
9,684

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - RF
ECCN Code :
EAR99
Transition Frequency :
500MHz
Radiation Hardening :
No
Polarity/Channel Type :
NPN
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
450mV @ 10mA, 100mA
Contact Plating :
Lead, Tin
Collector Base Voltage (VCBO) :
40V
Terminal Finish :
TIN LEAD
Published :
2002
Transistor Type :
NPN
Terminal Form :
Wire
JESD-609 Code :
e0
Collector Emitter Breakdown Voltage :
15V
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 100mA 1V
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Mount :
Through Hole
Number of Terminations :
3
Power Dissipation :
360mW
Mounting Type :
Through Hole
Pin Count :
3
Configuration :
Single
Pbfree Code :
No
Operating Temperature :
-65°C~200°C TJ
RoHS Status :
Non-RoHS Compliant
Emitter Base Voltage (VEBO) :
4.5V
Collector Emitter Voltage (VCEO) :
15V
Packaging :
Bulk
Transistor Element Material :
SILICON
Package / Case :
TO-206AA, TO-18-3 Metal Can
VCEsat-Max :
0.45 V
Transistor Application :
SWITCHING
Max Power Dissipation :
360mW
Lead Free :
Contains Lead
Max Collector Current :
400nA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
COLLECTOR
Terminal Position :
BOTTOM
Number of Elements :
1
Factory Lead Time :
12 Weeks
Collector-Base Capacitance-Max :
4pF
Datasheets
2N2369
Introducing Transistors - Bipolar (BJT) - RF Microchip Technology 2N2369 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-65°C~200°C TJ, Package / Case:TO-206AA, TO-18-3 Metal Can, 2N2369 pinout, 2N2369 datasheet PDF, 2N2369 amp .Beyond Transistors - Bipolar (BJT) - RF Microchip Technology 2N2369 ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C~200°C TJ 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole

2N2369A Overview


In this device, the DC current gain is 20 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 10mA, 100mA.Keeping the emitter base voltage at 4.5V allows for a high level of efficiency.500MHz is present in the transition frequency.Maximum collector currents can be below 400nA volts.

2N2369A Features


the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
a transition frequency of 500MHz


2N2369A Applications


There are a lot of Microsemi Corporation
2N2369A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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