ZXTC6720MCTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

7V

Mount :

Surface Mount

Factory Lead Time :

16 Weeks

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Additional Feature :

High Reliability

Operating Temperature :

-55°C~150°C TJ

Frequency - Transition :

160MHz 180MHz

Published :

2011

Max Power Dissipation :

1.7W

REACH SVHC :

No SVHC

Number of Elements :

2

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

100V

JESD-609 Code :

e4

Radiation Hardening :

No

Max Breakdown Voltage :

70V

Max Collector Current :

2.5A

Element Configuration :

Dual

Current - Collector (Ic) (Max) :

3.5A 2.5A

Transistor Application :

SWITCHING

Power Dissipation :

2.45W

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

NPN, PNP

Number of Pins :

8

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

70V

Base Part Number :

ZXTC6720MC

Case Connection :

COLLECTOR

Transistor Type :

NPN, PNP

Gain Bandwidth Product :

160MHz

Current - Collector Cutoff (Max) :

100nA

Voltage - Collector Emitter Breakdown (Max) :

80V 70V

Number of Terminations :

8

Pin Count :

8

Continuous Collector Current :

3.5A

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 200mA 2V / 40 @ 1.5A 5V

Transition Frequency :

160MHz

Frequency :

160MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

340mV

Package / Case :

8-WDFN Exposed Pad

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

15mV

Vce Saturation (Max) @ Ib, Ic :

340mV @ 300mA, 3.5A / 270mV @ 200mA, 1.5A