ZXTC6718MCTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Collector Emitter Voltage (VCEO) :

20V

Continuous Collector Current :

3.8A

Package / Case :

8-WDFN Exposed Pad

Transistor Application :

SWITCHING

JESD-609 Code :

e4

Pin Count :

8

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA

Published :

2012

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

20V

REACH SVHC :

No SVHC

Power Dissipation :

3W

Vce Saturation (Max) @ Ib, Ic :

300mV @ 125mA, 4.5A / 300mV @ 350mA, 3.5A

Factory Lead Time :

15 Weeks

Gain Bandwidth Product :

180MHz

Max Collector Current :

3.5A

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2A 2V / 150 @ 2A 2V

Max Power Dissipation :

1.7W

RoHS Status :

ROHS3 Compliant

Additional Feature :

High Reliability

Element Configuration :

Dual

Number of Pins :

8

Transistor Type :

NPN, PNP

Emitter Base Voltage (VEBO) :

-7V

Number of Elements :

2

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

Collector Emitter Saturation Voltage :

-225mV

Collector Base Voltage (VCBO) :

-25V

Transition Frequency :

140MHz

Current - Collector (Ic) (Max) :

4.5A 3.5A

Base Part Number :

ZXTC6718MC

Frequency :

140MHz

Polarity :

NPN, PNP

Packaging :

Tape and Reel (TR)

Case Connection :

COLLECTOR

Max Breakdown Voltage :

20V

Pbfree Code :

yes

Mount :

Surface Mount

Frequency - Transition :

140MHz 180MHz

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ