ZXTC2062E6TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Polarity :

NPN, PNP

Base Part Number :

Z2062

Transition Frequency :

215MHz

Published :

2006

Power - Max :

1.1W

Emitter Base Voltage (VEBO) :

7V

Collector Base Voltage (VCBO) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

3.1mm

Max Collector Current :

3.5A

Current - Collector (Ic) (Max) :

4A 3.5A

Radiation Hardening :

No

Power Dissipation :

1.7W

DC Current Gain (hFE) (Min) @ Ic, Vce :

280 @ 1A 2V / 170 @ 1A 2V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Weight :

7.994566mg

Lead Free :

Lead Free

Gain Bandwidth Product :

290MHz

Vce Saturation (Max) @ Ib, Ic :

190mV @ 200mA, 4A / 250mV @ 175mA, 3.5A

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

20V

Operating Temperature :

-55°C~150°C TJ

Height :

1.3mm

Element Configuration :

Dual

Contact Plating :

Tin

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Pin Count :

6

Pbfree Code :

yes

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Width :

1.8mm

Max Power Dissipation :

1.7W

Frequency :

215MHz

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

20V

Factory Lead Time :

13 Weeks

Collector Emitter Breakdown Voltage :

20V

Number of Elements :

2

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

40

Frequency - Transition :

215MHz 290MHz

Terminal Form :

Gull wing

ECCN Code :

EAR99

Transistor Type :

NPN, PNP

Package / Case :

SOT-23-6

Current - Collector Cutoff (Max) :

50nA ICBO

Mounting Type :

Surface Mount