ZXTC6717MCQTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

310mV @ 50mA, 4.5A, 310mV @ 150mA, 4A

Frequency - Transition :

120MHz, 110MHz

Series :

-

Power - Max :

1.13W

Subcategory :

Transistors

Reference Standard :

AEC-Q101

Voltage - Collector Emitter Breakdown (Max) :

15V, 12V

Current - Collector Cutoff (Max) :

100nA

Manufacturer :

Diodes Incorporated

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Polarity/Channel Type :

NPN AND PNP

Case Connection :

COLLECTOR

Surface Mount :

yes

Package :

Tape and Reel (TR)

Pbfree Code :

yes

Number of Terminals :

8

Brand :

Diodes Incorporated

Product Category :

Bipolar Transistors - BJT

Additional Feature :

High Reliability

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 200mA, 2V, 300 @ 100mA, 2V

Reach Compliance Code :

Compliant

Supplier Device Package :

W-DFN3020-8

Package Shape :

RECTANGULAR

Peak Reflow Temperature (Cel) :

260

Current - Collector (Ic) (Max) :

4.5A, 4A

Collector Current-Max (IC) :

4.5 A

Transistor Type :

NPN, PNP Complementary

Terminal Position :

Dual

Number of Elements :

2

Product Status :

Active

JESD-30 Code :

R-PDSO-N8

Configuration :

SEPARATE, 2 ELEMENTS

Package / Case :

8-VDFN Exposed Pad

Terminal Form :

NO LEAD

Transistor Element Material :

SILICON

JESD-609 Code :

e4

Packaging :

Reel

RoHS :

Details

Collector-Emitter Voltage-Max :

15 V

Product Type :

BJTs - Bipolar Transistors

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

DC Current Gain-Min (hFE) :

150