ZXMP6A16DN8QTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

DS Breakdown Voltage-Min :

60V

Mount :

Surface Mount

Terminal Form :

Gull wing

Factory Lead Time :

15 Weeks

Drain to Source Voltage (Vdss) :

60V

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

Matte Tin (Sn)

FET Type :

2 P-Channel (Dual)

Weight :

73.992255mg

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

Number of Channels :

2

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

85m Ω @ 2.9A, 10V

Element Configuration :

Dual

Pbfree Code :

yes

Max Power Dissipation :

1.81W

Gate Charge (Qg) (Max) @ Vgs :

24.2nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2002

Number of Elements :

2

Mounting Type :

Surface Mount

Turn On Delay Time :

3.5 ns

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1021pF @ 30V

Continuous Drain Current (ID) :

2.9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

High Reliability

Turn-Off Delay Time :

35 ns

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

10 ns

Packaging :

Tape and Reel (TR)

Rise Time :

4.1ns

Reference Standard :

AEC-Q101

Operating Temperature :

-55°C~150°C TJ