ZXMP10A13FTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Height :

1.02mm

Published :

2006

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Channels :

1

REACH SVHC :

No SVHC

Pin Count :

3

Rise Time :

2.1ns

Terminal Position :

Dual

Number of Pins :

3

Resistance :

1Ohm

Drain to Source Breakdown Voltage :

-100V

Rds On (Max) @ Id, Vgs :

1 Ω @ 600mA, 10V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Width :

1.4mm

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

17 Weeks

Drain Current-Max (Abs) (ID) :

0.7A

Current Rating :

-500mA

Fall Time (Typ) :

3.3 ns

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Threshold Voltage :

-4V

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

141pF @ 50V

Number of Terminations :

3

Continuous Drain Current (ID) :

-700mA

Gate Charge (Qg) (Max) @ Vgs :

3.5nC @ 10V

Weight :

7.994566mg

Length :

3.04mm

Turn On Delay Time :

1.6 ns

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Voltage - Rated DC :

-100V

Mount :

Surface Mount

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

5.9 ns

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Lead Free :

Lead Free

Manufacturer Package Identifier :

ZXMP10A13FTA

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

100V

Power Dissipation :

625mW

Current - Continuous Drain (Id) @ 25°C :

600mA Ta

Power Dissipation-Max :

625mW Ta

Mounting Type :

Surface Mount

Radiation Hardening :

No

FET Type :

P-Channel

ECCN Code :

EAR99

Transistor Application :

SWITCHING