ZXMP3A16DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

-30V

Pin Count :

8

Fall Time (Typ) :

21.4 ns

Terminal Finish :

Matte Tin (Sn)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pbfree Code :

yes

Turn-Off Delay Time :

37.1 ns

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Additional Feature :

LOW THRESHOLD

FET Feature :

Logic Level Gate

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

17 Weeks

Drain to Source Voltage (Vdss) :

30V

Height :

1.5mm

Number of Elements :

2

Width :

4mm

Power Dissipation :

2.1W

Lead Free :

Lead Free

Weight :

73.992255mg

Radiation Hardening :

No

Length :

5mm

Rds On (Max) @ Id, Vgs :

45m Ω @ 4.2A, 10V

Turn On Delay Time :

3.8 ns

Voltage - Rated DC :

-30V

Operating Mode :

ENHANCEMENT MODE

Resistance :

45mOhm

Gate Charge (Qg) (Max) @ Vgs :

29.6nC @ 10V

Published :

2007

FET Type :

2 P-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

4.2A

Number of Terminations :

8

Terminal Form :

Gull wing

Current Rating :

-5.5A

Rise Time :

6.5ns

Number of Channels :

2

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Continuous Drain Current (ID) :

5.5A

Power - Max :

1.8W

Input Capacitance (Ciss) (Max) @ Vds :

1022pF @ 15V

Max Power Dissipation :

2.1W

Mount :

Surface Mount