ZXMHN6A07T8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Voltage - Rated DC :

60V

Operating Mode :

ENHANCEMENT MODE

Width :

3.7mm

Base Part Number :

ZXMHN6A07T8

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

ROHS3 Compliant

FET Type :

4 N-Channel (H-Bridge)

Fall Time (Typ) :

1.4 ns

Number of Channels :

4

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 10V

Terminal Position :

Dual

Mount :

Surface Mount

Number of Pins :

8

Length :

6.7mm

Pin Count :

8

JESD-609 Code :

e3

Continuous Drain Current (ID) :

1.6A

Max Power Dissipation :

1.6W

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

300m Ω @ 1.8A, 10V

Factory Lead Time :

12 Weeks

Turn On Delay Time :

1.8 ns

Rise Time :

1.4ns

Mounting Type :

Surface Mount

Height :

1.6mm

Packaging :

Tape and Reel (TR)

Package / Case :

8-SMD, Gull Wing

Current Rating :

1.6A

Number of Elements :

4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

REACH SVHC :

No SVHC

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

60V

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

1.4A

Transistor Application :

SWITCHING

Turn-Off Delay Time :

4.9 ns

Input Capacitance (Ciss) (Max) @ Vds :

166pF @ 40V

Published :

2006

Drain-source On Resistance-Max :

0.3Ohm

Peak Reflow Temperature (Cel) :

260

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON