ZXMHC3A01T8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Base Part Number :

ZXMHC3A01T8

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

120m Ω @ 2.5A, 10V

Pbfree Code :

yes

FET Type :

2 N and 2 P-Channel (H-Bridge)

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

2.3 ns

JESD-609 Code :

e3

Width :

3.7mm

Radiation Hardening :

No

Rise Time :

2.3ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 25V

Resistance :

210mOhm

Package / Case :

8-SMD, Gull Wing

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Mount :

Surface Mount

Factory Lead Time :

17 Weeks

Current - Continuous Drain (Id) @ 25°C :

2.7A 2A

Number of Elements :

4

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Turn-Off Delay Time :

12.1 ns

Mounting Type :

Surface Mount

Power Dissipation :

1.7W

Length :

6.7mm

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

Threshold Voltage :

-1V

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

30V

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

3.9nC @ 10V

Max Power Dissipation :

1.3W

Continuous Drain Current (ID) :

3.1A

Height :

1.6mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2006

Drain Current-Max (Abs) (ID) :

2.7A

FET Feature :

Logic Level Gate

Number of Pins :

8

Lead Free :

Lead Free

Current Rating :

3.1A

RoHS Status :

ROHS3 Compliant