ZUMTS17NTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - RF

Collector-Base Capacitance-Max :

1.5pF

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 10V

Transistor Element Material :

SILICON

Transition Frequency :

3200MHz

Transistor Type :

NPN

Max Collector Current :

50mA

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Weight :

6.010099mg

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Number of Pins :

3

Gain Bandwidth Product :

3.2 GHz

Published :

2010

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Package / Case :

SC-70, SOT-323

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

11V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Radiation Hardening :

No

hFE Min :

56

Pin Count :

3

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

3V

Collector Emitter Saturation Voltage :

500mV

Base Part Number :

ZUMTS17

Terminal Position :

Dual

Factory Lead Time :

15 Weeks

Power - Max :

330mW

Transistor Application :

SWITCHING

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Max Breakdown Voltage :

11V

Number of Terminations :

3

Max Power Dissipation :

330mW

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

20V

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

11V