ZUMTS17NTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - RF

Radiation Hardening :

No

Transition Frequency :

3200MHz

hFE Min :

56

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 10V

Max Breakdown Voltage :

11V

Number of Pins :

3

Collector Emitter Saturation Voltage :

500mV

Collector Emitter Breakdown Voltage :

11V

Packaging :

Tape and Reel (TR)

Weight :

6.010099mg

Emitter Base Voltage (VEBO) :

3V

Factory Lead Time :

15 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Power - Max :

330mW

Element Configuration :

Single

Pbfree Code :

yes

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Transistor Type :

NPN

Collector Base Voltage (VCBO) :

20V

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Base Part Number :

ZUMTS17

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing

Number of Terminations :

3

Max Collector Current :

50mA

Pin Count :

3

Transistor Element Material :

SILICON

Terminal Position :

Dual

Package / Case :

SC-70, SOT-323

Published :

2010

Time@Peak Reflow Temperature-Max (s) :

40

Collector-Base Capacitance-Max :

1.5pF

Collector Emitter Voltage (VCEO) :

11V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Max Power Dissipation :

330mW

Gain Bandwidth Product :

3.2 GHz