ZUMTS17NTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - RF

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 10V

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

500mV

Power - Max :

330mW

Transistor Type :

NPN

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

3V

Weight :

6.010099mg

Radiation Hardening :

No

Max Breakdown Voltage :

11V

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Package / Case :

SC-70, SOT-323

Collector Base Voltage (VCBO) :

20V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

50mA

Element Configuration :

Single

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

3200MHz

Max Power Dissipation :

330mW

Pin Count :

3

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Terminal Position :

Dual

Collector-Base Capacitance-Max :

1.5pF

Published :

2010

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Breakdown Voltage :

11V

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

3.2 GHz

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Base Part Number :

ZUMTS17

Collector Emitter Voltage (VCEO) :

11V

Factory Lead Time :

15 Weeks

ECCN Code :

EAR99

Mounting Type :

Surface Mount

hFE Min :

56