ZTX857STZ

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

250mV @ 600mA, 3A

Pin Count :

3

Height :

4.01mm

Collector Emitter Breakdown Voltage :

300V

Package / Case :

E-Line-3, Formed Leads

Current Rating :

5A

Number of Pins :

3

Published :

2006

Number of Elements :

1

Gain Bandwidth Product :

80MHz

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

1μA ICBO

Max Power Dissipation :

1.2W

Length :

4.77mm

Collector Base Voltage (VCBO) :

330V

Max Breakdown Voltage :

300V

Terminal Form :

Wire

ECCN Code :

EAR99

Transistor Type :

NPN

Radiation Hardening :

No

Power Dissipation :

1.2W

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount, Through Hole

Weight :

453.59237mg

JESD-609 Code :

e3

Packaging :

Tape and Box (TB)

RoHS Status :

ROHS3 Compliant

Frequency :

80MHz

Base Part Number :

ZTX857

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 10V

Emitter Base Voltage (VEBO) :

6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

80MHz

Transistor Application :

SWITCHING

Voltage - Rated DC :

300V

Pbfree Code :

No

REACH SVHC :

No SVHC

Number of Terminations :

3

Max Collector Current :

3A

Width :

2.41mm

Factory Lead Time :

15 Weeks

Lead Free :

Lead Free

Element Configuration :

Single

Continuous Collector Current :

3A

Operating Temperature :

-55°C~200°C TJ

Collector Emitter Saturation Voltage :

250mV

Collector Emitter Voltage (VCEO) :

300V

Polarity/Channel Type :

NPN

Terminal Finish :

Matte Tin (Sn)