ZTX857STOB
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- Mfr.Part #
- ZTX857STOB
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 3A E-LINE
- Stock
- 49,065
- In Stock ：
- 49,065
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Weight :
- 453.59237mg
- Terminal Finish :
- MATTE TIN
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 600mA, 3A
- Collector Base Voltage (VCBO) :
- 330V
- JESD-30 Code :
- R-PSIP-W3
- Max Collector Current :
- 3A
- Emitter Base Voltage (VEBO) :
- 6V
- Mount :
- Through Hole
- Width :
- 2.41mm
- Number of Elements :
- 1
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Continuous Collector Current :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- ZTX857
- Transition Frequency :
- 80MHz
- Voltage - Rated DC :
- 300V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Current Rating :
- 5A
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 300V
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Unknown
- Collector Emitter Voltage (VCEO) :
- 250mV
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 80MHz
- Height :
- 4.01mm
- Max Power Dissipation :
- 1.2W
- Element Configuration :
- Single
- Length :
- 4.77mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~200°C TJ
- Transistor Element Material :
- SILICON
- HTS Code :
- 8541.29.00.75
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 10V
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Terminal Form :
- Wire
- Package / Case :
- E-Line-3
- JESD-609 Code :
- e3
- Datasheets
- ZTX857STOB
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Tape & Reel (TR) Through Hole
ZTX857STOB Overview
DC current gain in this device equals 100 @ 500mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 600mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at 3A to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.As a result, the part has a transition frequency of 80MHz.In extreme cases, the collector current can be as low as 3A volts.
ZTX857STOB Features
the DC current gain for this device is 100 @ 500mA 10V
the vce saturation(Max) is 250mV @ 600mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 80MHz
ZTX857STOB Applications
There are a lot of Diodes Incorporated
ZTX857STOB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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