ZTX857
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- Mfr.Part #
- ZTX857
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 3A E-LINE
- Stock
- 5,539
- In Stock ：
- 5,539
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 453.59237mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Power Dissipation :
- 1.2W
- Terminal Finish :
- Matte Tin (Sn)
- Element Configuration :
- Single
- Height :
- 4.01mm
- Operating Temperature :
- -55°C~200°C TJ
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 600mA, 3A
- Gain Bandwidth Product :
- 80MHz
- Current Rating :
- 5A
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Number of Pins :
- 3
- Voltage - Rated DC :
- 300V
- Continuous Collector Current :
- 3A
- Transistor Element Material :
- SILICON
- Width :
- 2.41mm
- Base Part Number :
- ZTX857
- Packaging :
- Bulk
- Package / Case :
- E-Line-3
- Transistor Type :
- NPN
- Frequency :
- 80MHz
- Mounting Type :
- Through Hole
- Transition Frequency :
- 80MHz
- Polarity/Channel Type :
- NPN
- Published :
- 2012
- Max Collector Current :
- 3A
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 330V
- Factory Lead Time :
- 15 Weeks
- Max Power Dissipation :
- 1.2W
- Terminal Form :
- Wire
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 300V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 10V
- Emitter Base Voltage (VEBO) :
- 6V
- Length :
- 4.77mm
- Datasheets
- ZTX857
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX857 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 600mA, 3A.Continuous collector voltages of 3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 80MHz.During maximum operation, collector current can be as low as 3A volts.
ZTX857 Features
the DC current gain for this device is 100 @ 500mA 10V
the vce saturation(Max) is 250mV @ 600mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 80MHz
ZTX857 Applications
There are a lot of Diodes Incorporated
ZTX857 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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