ZTX558STZ

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Mfr.Part #
ZTX558STZ
Manufacturer
Diodes Incorporated
Package / Case
E-Line-3, Formed Leads
Datasheet
Download
Description
TRANS PNP 400V 0.2A E-LINE
Stock
1,550
In Stock :
1,550

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Voltage - Rated DC :
-400V
Terminal Form :
Wire
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Width :
2.41mm
Number of Elements :
1
Power Dissipation :
1W
Collector Emitter Saturation Voltage :
-500mV
Transistor Type :
PNP
Base Part Number :
ZTX558
Transition Frequency :
50MHz
REACH SVHC :
No SVHC
Max Power Dissipation :
1W
Max Collector Current :
200mA
Length :
4.77mm
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
Weight :
453.59237mg
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Published :
2006
Factory Lead Time :
15 Weeks
Peak Reflow Temperature (Cel) :
260
Collector Base Voltage (VCBO) :
400V
Mounting Type :
Through Hole
Height :
4.01mm
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
40
Operating Temperature :
-55°C~200°C TJ
Polarity/Channel Type :
PNP
Packaging :
Tape and Box (TB)
Terminal Finish :
Matte Tin (Sn)
Gain Bandwidth Product :
50MHz
Element Configuration :
Single
Pbfree Code :
yes
JESD-609 Code :
e3
Mount :
Through Hole
Emitter Base Voltage (VEBO) :
-5V
Current Rating :
-200mA
Package / Case :
E-Line-3, Formed Leads
Lead Free :
Lead Free
Frequency :
50MHz
Continuous Collector Current :
-200mA
Current - Collector Cutoff (Max) :
100nA
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
400V
Radiation Hardening :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 50mA 10V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 6mA, 50mA
Collector Emitter Voltage (VCEO) :
400V
Datasheets
ZTX558STZ
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZTX558STZ from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:ZTX558, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~200°C TJ, Package / Case:E-Line-3, Formed Leads, ZTX558STZ pinout, ZTX558STZ datasheet PDF, ZTX558STZ amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZTX558STZ ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZTX558STZ


PNP -55°C~200°C TJ 100nA 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Box (TB) Through Hole

ZTX558STZ Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 50mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 6mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at -200mA in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.

ZTX558STZ Features


the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 50MHz


ZTX558STZ Applications


There are a lot of Diodes Incorporated
ZTX558STZ applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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