ZTX551
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- Mfr.Part #
- ZTX551
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A E-LINE
- Stock
- 12,945
- In Stock ：
- 12,945
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 2.41mm
- Pbfree Code :
- yes
- Pin Count :
- 3
- Frequency :
- 150MHz
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 150mA 10V
- Length :
- 4.77mm
- JEDEC-95 Code :
- TO-92
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- -350mV
- Collector Emitter Breakdown Voltage :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 1W
- Collector Base Voltage (VCBO) :
- 80V
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Wire
- Current Rating :
- -1A
- Gain Bandwidth Product :
- 150MHz
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Rated DC :
- -60V
- Operating Temperature :
- -55°C~200°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 1A
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Height :
- 4.01mm
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 60V
- Base Part Number :
- ZTX551
- Max Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Published :
- 2006
- Transition Frequency :
- 150MHz
- Package / Case :
- E-Line-3
- Transistor Type :
- PNP
- Continuous Collector Current :
- -1A
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 1W
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 15mA, 150mA
- Weight :
- 453.59237mg
- Datasheets
- ZTX551
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX551 Overview
This device has a DC current gain of 50 @ 150mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -350mV.A VCE saturation (Max) of 350mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
ZTX551 Features
the DC current gain for this device is 50 @ 150mA 10V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
ZTX551 Applications
There are a lot of Diodes Incorporated
ZTX551 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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