ZTX550STZ
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- Mfr.Part #
- ZTX550STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 45V 1A E-LINE
- Stock
- 2,113
- In Stock ：
- 2,113
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- ZTX550
- Max Collector Current :
- 1A
- Terminal Form :
- Wire
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1W
- Width :
- 2.41mm
- Collector Base Voltage (VCBO) :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Max Power Dissipation :
- 1W
- Pin Count :
- 3
- Length :
- 4.77mm
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 45V
- Weight :
- 453.59237mg
- Factory Lead Time :
- 15 Weeks
- Voltage - Rated DC :
- -45V
- REACH SVHC :
- No SVHC
- Package / Case :
- E-Line-3, Formed Leads
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 150MHz
- Transistor Element Material :
- SILICON
- Frequency :
- 150MHz
- Collector Emitter Saturation Voltage :
- -250mV
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 15mA, 150mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 4.01mm
- Pbfree Code :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- Current Rating :
- -1A
- Number of Terminations :
- 3
- Packaging :
- Tape and Box (TB)
- Gain Bandwidth Product :
- 150MHz
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Published :
- 2001
- Operating Temperature :
- -55°C~200°C TJ
- Radiation Hardening :
- No
- Continuous Collector Current :
- -1A
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Datasheets
- ZTX550STZ
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX550STZ Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 15mA, 150mA.A -1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
ZTX550STZ Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 15mA, 150mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
ZTX550STZ Applications
There are a lot of Diodes Incorporated
ZTX550STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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