ZTX553
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- Mfr.Part #
- ZTX553
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A E-LINE
- Stock
- 97,003
- In Stock ：
- 97,003
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 2.41mm
- Transistor Type :
- PNP
- Height :
- 4.01mm
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 15mA, 150mA
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 100V
- Published :
- 2006
- Emitter Base Voltage (VEBO) :
- -5V
- Voltage - Rated DC :
- -100V
- Max Power Dissipation :
- 1W
- Transition Frequency :
- 150MHz
- Collector Emitter Breakdown Voltage :
- 100V
- Terminal Form :
- Wire
- Collector Base Voltage (VCBO) :
- 120V
- JESD-609 Code :
- e3
- Length :
- 4.77mm
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- JEDEC-95 Code :
- TO-92
- Factory Lead Time :
- 15 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1A
- Polarity/Channel Type :
- PNP
- Package / Case :
- E-Line-3
- Continuous Collector Current :
- -1A
- Current Rating :
- -1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Power Dissipation :
- 1W
- Collector Emitter Saturation Voltage :
- -300mV
- Operating Temperature :
- -55°C~200°C TJ
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 150MHz
- Element Configuration :
- Single
- Frequency :
- 150MHz
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Weight :
- 453.59237mg
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- ZTX553
- Datasheets
- ZTX553
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX553 Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 15mA, 150mA.A -1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
ZTX553 Features
the DC current gain for this device is 40 @ 150mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 250mV @ 15mA, 150mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
ZTX553 Applications
There are a lot of Diodes Incorporated
ZTX553 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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