ZDM4206NTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

RoHS Compliant

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Breakdown Voltage :

60V

Number of Terminations :

8

FET Type :

2 N-Channel (Dual)

Length :

6.7mm

Continuous Drain Current (ID) :

1A

Height :

1.6mm

Lead Free :

Lead Free

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

1Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 1mA

Qualification Status :

Not Qualified

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

1A

Number of Elements :

2

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

60V

Fall Time (Typ) :

15 ns

Power Dissipation :

2.75W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 25V

Base Part Number :

ZDM4206N

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Rise Time :

12ns

Turn-Off Delay Time :

12 ns

Rds On (Max) @ Id, Vgs :

1 Ω @ 1.5A, 10V

Current Rating :

1A

Turn On Delay Time :

8 ns

JESD-30 Code :

R-PDSO-G8

Max Power Dissipation :

2.75W

Pin Count :

8

Mounting Type :

Surface Mount

Number of Channels :

2

Package / Case :

8-SMD, Gull Wing

Width :

3.7mm

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V