ZDM4206NTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

12ns

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G10

Number of Channels :

2

Drain to Source Breakdown Voltage :

60V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

12 ns

Drain-source On Resistance-Max :

1Ohm

RoHS Status :

RoHS Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Published :

1997

Turn On Delay Time :

8 ns

Rds On (Max) @ Id, Vgs :

1 Ω @ 1.5A, 10V

Max Power Dissipation :

2.25W

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3V @ 1mA

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Base Part Number :

ZDM4206N

Package / Case :

8-SMD, Gull Wing

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 25V

Fall Time (Typ) :

15 ns

Packaging :

Tape and Reel (TR)

Current Rating :

1A

Power Dissipation :

2.75W

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

1A

FET Feature :

Logic Level Gate

Number of Terminations :

10

Reach Compliance Code :

Unknown

Voltage - Rated DC :

60V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

1A