UTV8100B

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1A 5V

Collector Emitter Voltage (VCEO) :

30V

Mounting Type :

Chassis Mount

Collector Emitter Breakdown Voltage :

60V

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

65V

Number of Terminations :

4

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

55RT

Published :

1997

Terminal Position :

Dual

Pbfree Code :

No

Number of Pins :

55

Mount :

Chassis Mount, Screw

Additional Feature :

High Reliability

Configuration :

COMMON EMITTER, 2 ELEMENTS

Gain :

8.5dB ~ 9.5dB

Operating Temperature :

200°C TJ

Max Frequency :

860MHz

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Max Collector Current :

15A

JESD-30 Code :

R-CDFM-F4

Packaging :

Bulk

RoHS Status :

RoHS Compliant

Factory Lead Time :

13 Weeks

Terminal Form :

Flat

Polarity/Channel Type :

NPN

Radiation Hardening :

No

Pin Count :

4

Transistor Application :

AMPLIFIER

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Number of Elements :

2

Max Power Dissipation :

290W

JESD-609 Code :

e0

Frequency - Transition :

470MHz~860MHz

Terminal Finish :

TIN LEAD