US6X8TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Power - Max :

400mW

Time@Peak Reflow Temperature-Max (s) :

10

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Package / Case :

6-SMD, Flat Leads

Frequency - Transition :

320MHz

Current - Collector (Ic) (Max) :

1A

Current - Collector Cutoff (Max) :

100nA ICBO

Packaging :

Tape and Reel (TR)

Factory Lead Time :

13 Weeks

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Voltage - Collector Emitter Breakdown (Max) :

30V

Polarity/Channel Type :

NPN

Surface Mount :

yes

Number of Elements :

2

Terminal Finish :

Tin/Copper (Sn/Cu)

Operating Temperature :

150°C TJ

Transistor Application :

AMPLIFIER

Configuration :

SEPARATE, 2 ELEMENTS

Transistor Type :

2 NPN (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 100mA 2V

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

350mV @ 25mA, 500mA

Qualification Status :

Not Qualified

Number of Terminations :

6

Pin Count :

6

JESD-609 Code :

e2

Lead Free :

Lead Free

Pbfree Code :

yes

JESD-30 Code :

R-PDSO-F6

Power Dissipation-Max (Abs) :

0.4W

Transition Frequency :

320MHz