US6X3TR
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- Mfr.Part #
- US6X3TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 12V 3A TUMT6
- Stock
- 2,400
- In Stock ：
- 2,400
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Terminal Finish :
- TIN COPPER
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector (Ic) (Max) :
- 3A
- Base Part Number :
- US6X
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 15V
- Number of Pins :
- 6
- Terminal Position :
- Dual
- Max Power Dissipation :
- 400mW
- Collector Emitter Breakdown Voltage :
- 12V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 30mA, 1.5A
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e2
- Pin Count :
- 6
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- hFE Min :
- 270
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- Not Qualified
- Collector Emitter Voltage (VCEO) :
- 250mV
- Published :
- 2007
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 500mA 2V
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 360MHz
- Gain Bandwidth Product :
- 360MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 6
- Package / Case :
- 6-SMD, Flat Leads
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 3A
- Lead Free :
- Lead Free
- Datasheets
- US6X3TR
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN 6-SMD, Flat Leads Tape & Reel (TR) Surface Mount
US6X3TR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 30mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 360MHz.During maximum operation, collector current can be as low as 3A volts.
US6X3TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 360MHz
US6X3TR Applications
There are a lot of ROHM Semiconductor
US6X3TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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