US5U35TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

700mA Ta

Package / Case :

6-SMD (5 Leads), Flat Lead

JESD-609 Code :

e2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Number of Elements :

1

Element Configuration :

Single

Rise Time :

5ns

Continuous Drain Current (ID) :

700mA

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Published :

2008

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

5 ns

Pin Count :

5

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 10V

Drain Current-Max (Abs) (ID) :

0.7A

Turn-Off Delay Time :

17 ns

Operating Temperature :

150°C TJ

Number of Terminations :

5

Lead Free :

Lead Free

FET Type :

P-Channel

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

10

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

1.7nC @ 5V

Drain to Source Breakdown Voltage :

25V

Power Dissipation :

700mW

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

800m Ω @ 700mA, 10V

FET Feature :

Schottky Diode (Isolated)

Mount :

Surface Mount

Terminal Position :

Dual

Pbfree Code :

yes

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

5

Resistance :

1.4Ohm

Power Dissipation-Max :

1W Ta

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Turn On Delay Time :

6 ns

Factory Lead Time :

16 Weeks

Terminal Finish :

Tin/Copper (Sn/Cu)

Drain to Source Voltage (Vdss) :

45V