US5U3TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Published :

2006

Power Dissipation :

1W

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

1.5A

Gate to Source Voltage (Vgs) :

12V

Pbfree Code :

yes

Operating Temperature :

150°C TJ

Number of Terminations :

5

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 10V

Termination :

SMD/SMT

Turn-Off Delay Time :

15 ns

Terminal Position :

Dual

Threshold Voltage :

1.5V

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 4.5V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

1.5V @ 1mA

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Power Dissipation-Max :

1W Ta

Nominal Vgs :

1.5 V

Lead Free :

Lead Free

Number of Elements :

1

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Radiation Hardening :

No

FET Feature :

Schottky Diode (Isolated)

Terminal Finish :

TIN COPPER

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

240m Ω @ 1.5A, 4.5V

Dual Supply Voltage :

30V

Drain-source On Resistance-Max :

0.34Ohm

Package / Case :

6-SMD (5 Leads), Flat Lead

Rise Time :

9ns

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e2

Fall Time (Typ) :

6 ns

Number of Pins :

5

Time@Peak Reflow Temperature-Max (s) :

10

Drain to Source Breakdown Voltage :

30V

Turn On Delay Time :

7 ns

Pin Count :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)