US5U1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

Schottky Diode (Isolated)

Lead Free :

Lead Free

Width :

1.6mm

JESD-609 Code :

e2

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

1.5A

Fall Time (Typ) :

9 ns

Voltage - Rated DC :

30V

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Radiation Hardening :

No

Package / Case :

6-SMD (5 Leads), Flat Lead

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Power Dissipation-Max :

1W Ta

RoHS Status :

ROHS3 Compliant

Height :

850μm

Pin Count :

5

Turn-Off Delay Time :

15 ns

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 10V

Rds On (Max) @ Id, Vgs :

240m Ω @ 1.5A, 4.5V

Number of Pins :

5

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Rise Time :

9ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.34Ohm

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 4.5V

Transistor Application :

SWITCHING

Number of Terminations :

5

Time@Peak Reflow Temperature-Max (s) :

10

Number of Elements :

1

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Published :

2007

Terminal Finish :

TIN COPPER

Transistor Element Material :

SILICON

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

12V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Vgs (Max) :

±12V

Length :

2.9mm

Current Rating :

1.5A

Drain to Source Breakdown Voltage :

30V

Turn On Delay Time :

7 ns

Power Dissipation :

700mW