UMX1NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Number of Terminations :

6

Number of Elements :

2

Emitter Base Voltage (VEBO) :

7V

hFE Min :

120

Published :

2003

Gain Bandwidth Product :

180MHz

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

10

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

60V

JESD-609 Code :

e2

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Pin Count :

6

Collector Emitter Voltage (VCEO) :

50V

Max Collector Current :

150mA

Transition Frequency :

180MHz

Height :

900μm

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

100nA ICBO

Factory Lead Time :

13 Weeks

Power Dissipation :

150mW

Max Frequency :

100MHz

Element Configuration :

Dual

Number of Pins :

6

Max Power Dissipation :

150mW

VCEsat-Max :

0.4 V

Current Rating :

150mA

Mount :

Surface Mount

Length :

2mm

Terminal Form :

Gull wing

Operating Temperature :

150°C TJ

Max Breakdown Voltage :

50V

Terminal Finish :

Tin/Copper (Sn/Cu)

HTS Code :

8541.21.00.75

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Width :

1.25mm

Voltage - Rated DC :

50V

Type :

GENERAL PURPOSE

Base Part Number :

*MX1

RoHS Status :

ROHS3 Compliant

Polarity :

NPN

Collector Emitter Saturation Voltage :

400mV

Continuous Collector Current :

150mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Lead Free :

Lead Free

Transistor Type :

2 NPN (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V