UMX1N

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Arrays

Pbfree Code :

yes

Power Dissipation :

150mW

Transistor Application :

AMPLIFIER

Published :

2003

Current Rating :

150mA

Lead Free :

Lead Free

Base Part Number :

*MX1

Number of Terminations :

6

Terminal Form :

Gull wing

JESD-609 Code :

e2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

50V

Width :

1.25mm

Max Collector Current :

150mA

Operating Temperature :

150°C TJ

Collector Base Voltage (VCBO) :

60V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Collector Emitter Breakdown Voltage :

50V

VCEsat-Max :

0.4 V

Continuous Collector Current :

150mA

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

13 Weeks

Current - Collector Cutoff (Max) :

100nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Transistor Type :

2 NPN (Dual)

Terminal Finish :

Tin/Copper (Sn/Cu)

Height :

900μm

Max Power Dissipation :

150mW

Time@Peak Reflow Temperature-Max (s) :

10

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Number of Elements :

2

Collector Emitter Voltage (VCEO) :

50V

Max Breakdown Voltage :

50V

Transition Frequency :

180MHz

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Number of Pins :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

400mV

Length :

2mm

Transistor Element Material :

SILICON

Pin Count :

6

Gain Bandwidth Product :

180MHz

HTS Code :

8541.21.00.75

Max Frequency :

100MHz

Element Configuration :

Dual

Type :

GENERAL PURPOSE

hFE Min :

120

Emitter Base Voltage (VEBO) :

7V

Polarity :

NPN