UMB2NFHATN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Frequency - Transition :

250MHz

Collector Emitter Breakdown Voltage :

-50V

Polarity/Channel Type :

PNP

Series :

Automotive, AEC-Q101

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Transistor Type :

2 PNP Pre-Biased (Dual)

Operating Temperature :

150°C TJ

Power Dissipation-Max (Abs) :

0.15W

Surface Mount :

yes

Number of Elements :

2

Factory Lead Time :

13 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Terminal Form :

Gull wing

Published :

2016

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

REACH SVHC :

Unknown

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Mounting Type :

Surface Mount

Number of Terminations :

6

Transition Frequency :

250MHz

Packaging :

Cut Tape (CT)

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

150mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Current - Collector (Ic) (Max) :

100mA