UMB2NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Time@Peak Reflow Temperature-Max (s) :

10

Continuous Collector Current :

-30mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

300mV

VCEsat-Max :

0.3 V

Base Part Number :

MB2

Transition Frequency :

250MHz

Factory Lead Time :

13 Weeks

Max Collector Current :

100mA

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Transistor Type :

2 PNP - Pre-Biased (Dual)

Resistor - Base (R1) :

47k Ω

Max Power Dissipation :

150mW

Polarity :

PNP

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Terminal Finish :

Tin/Copper (Sn/Cu)

Current Rating :

-30mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Min Operating Temperature :

-55°C

Resistor - Emitter Base (R2) :

47k Ω

Pbfree Code :

yes

hFE Min :

68

Power Dissipation :

150mW

Max Breakdown Voltage :

50V

JESD-609 Code :

e2

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Mount :

Surface Mount

Lead Free :

Lead Free

Published :

2004

Radiation Hardening :

No

Max Operating Temperature :

150°C

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

HTS Code :

8541.21.00.75

Frequency - Transition :

250MHz

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

500nA

Voltage - Rated DC :

-50V

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Element Configuration :

Dual