TSM8568CS RLG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

0.02Ohm

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Avalanche Energy Rating (Eas) :

21.6 mJ

Peak Reflow Temperature (Cel) :

260

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power - Max :

6W

FET Feature :

Standard

Packaging :

Digi-Reel®

FET Type :

N and P-Channel

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

2

Pulsed Drain Current-Max (IDM) :

60A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

8A

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

15A Tc 13A Tc

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 4.5V, 11nC @ 4.5V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

646pF @ 15V 1089pF @ 15V

JESD-30 Code :

R-PDSO-G8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

16m Ω @ 8A, 10V, 24m Ω @ 7A, 10V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

20 Weeks

Published :

2016