TSM8568CS RLG
- Mfr.Part #
- TSM8568CS RLG
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N/P-CH 30V 15A/13A 8SOP
- Stock
- 21,970
- In Stock :
- 21,970
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- JESD-30 Code :
- R-PDSO-G8
- Surface Mount :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 21.6 mJ
- DS Breakdown Voltage-Min :
- 30V
- Terminal Position :
- Dual
- Drain to Source Voltage (Vdss) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N and P-Channel
- Drain-source On Resistance-Max :
- 0.02Ohm
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 60A
- FET Feature :
- Standard
- Number of Terminations :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Digi-Reel®
- Published :
- 2016
- Number of Elements :
- 2
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Power - Max :
- 6W
- Input Capacitance (Ciss) (Max) @ Vds :
- 646pF @ 15V 1089pF @ 15V
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 8A, 10V, 24m Ω @ 7A, 10V
- Factory Lead Time :
- 20 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 7nC @ 4.5V, 11nC @ 4.5V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain Current-Max (Abs) (ID) :
- 8A
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc 13A Tc
- Datasheets
- TSM8568CS RLG

TSM8568CS RLG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Taiwan Semiconductor Corporation stock available at
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