TSM8568CS RLG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

8A

FET Type :

N and P-Channel

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G8

Rds On (Max) @ Id, Vgs :

16m Ω @ 8A, 10V, 24m Ω @ 7A, 10V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Standard

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 4.5V, 11nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

15A Tc 13A Tc

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Avalanche Energy Rating (Eas) :

21.6 mJ

Pulsed Drain Current-Max (IDM) :

60A

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Digi-Reel®

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.02Ohm

Surface Mount :

yes

DS Breakdown Voltage-Min :

30V

Terminal Form :

Gull wing

Terminal Position :

Dual

Power - Max :

6W

Number of Terminations :

8

Published :

2016

Factory Lead Time :

20 Weeks

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

646pF @ 15V 1089pF @ 15V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.5V @ 250μA