TSM80N950CI C0G

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Mfr.Part #
TSM80N950CI C0G
Manufacturer
Taiwan Semiconductor
Package / Case
TO-220-3 Full Pack, Isolated Tab
Datasheet
Download
Description
MOSFET N-CH 800V 6A ITO220AB
Stock
478
In Stock :
478

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Manufacturer :
Taiwan Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Avalanche Energy Rating (Eas) :
121 mJ
Drain to Source Voltage (Vdss) :
800V
Vgs(th) (Max) @ Id :
4V @ 250µA
Surface Mount :
No
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Through Hole
JEDEC-95 Code :
TO-220AB
Current - Continuous Drain (Id) @ 25°C :
6A Tc
Drain-source On Resistance-Max :
0.95Ohm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
18A
DS Breakdown Voltage-Min :
800V
Terminal Position :
Single
Power Dissipation-Max :
25W Tc
JESD-30 Code :
R-PSFM-T3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±30V
Drain Current-Max (Abs) (ID) :
6A
Packaging :
Tube
Number of Elements :
1
Number of Terminations :
3
Input Capacitance (Ciss) (Max) @ Vds :
691pF @ 100V
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
950m Ω @ 2A, 10V
Transistor Element Material :
SILICON
Package / Case :
TO-220-3 Full Pack, Isolated Tab
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
24 Weeks
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate Charge (Qg) (Max) @ Vgs :
19.6nC @ 10V
FET Type :
N-Channel
Transistor Application :
SWITCHING
Datasheets
TSM80N950CI C0G
Introducing Transistors - FETs, MOSFETs - Single Taiwan Semiconductor TSM80N950CI C0G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3 Full Pack, Isolated Tab, Operating Temperature:-55°C~150°C TJ, TSM80N950CI C0G pinout, TSM80N950CI C0G datasheet PDF, TSM80N950CI C0G amp .Beyond Transistors - FETs, MOSFETs - Single Taiwan Semiconductor TSM80N950CI C0G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Taiwan Semiconductor TSM80N950CI C0G


N-Channel Tube 950m Ω @ 2A, 10V ±30V 691pF @ 100V 19.6nC @ 10V 800V TO-220-3 Full Pack, Isolated Tab

TSM80N950CI C0G Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 121 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 691pF @ 100V.There is no drain current on this device since the maximum continuous current it can conduct is 6A.There is a peak drain current of 18A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 800V, it should remain above the 800V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

TSM80N950CI C0G Features


the avalanche energy rating (Eas) is 121 mJ
based on its rated peak drain current 18A.
a 800V drain to source voltage (Vdss)


TSM80N950CI C0G Applications


There are a lot of Taiwan Semiconductor Corporation
TSM80N950CI C0G applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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