STP9NK80Z
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- Mfr.Part #
- STP9NK80Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 7.5A TO220AB
- Stock
- 33,390
- In Stock ：
- 33,390
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 3.75A, 10V
- Power Dissipation-Max :
- 150W Tc
- Rise Time :
- 19ns
- Turn-Off Delay Time :
- 58 ns
- JEDEC-95 Code :
- TO-220AB
- Series :
- SuperMESH™
- Continuous Drain Current (ID) :
- 7.5A
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- AVALANCHE RATED
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Avalanche Energy Rating (Eas) :
- 350 mJ
- Current Rating :
- 7.5A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900pF @ 25V
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 30A
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Vgs (Max) :
- ±30V
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Base Part Number :
- STP9N
- Mount :
- Through Hole
- Power Dissipation :
- 150W
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Gate to Source Voltage (Vgs) :
- 30V
- Voltage - Rated DC :
- 800V
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 18 ns
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 800V
- Resistance :
- 1.2Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 7.5A Tc
- Package / Case :
- TO-220-3
- Datasheets
- STP9NK80Z
N-Channel Tube 1.2 Ω @ 3.75A, 10V ±30V 1900pF @ 25V 84nC @ 10V TO-220-3
STP9NK80Z Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 350 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1900pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 7.5A amps.In this device, the drain-source breakdown voltage is 800V and VGS=800V, so the drain-source breakdown voltage is 800V in this case.It is [58 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 30A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STP9NK80Z Features
the avalanche energy rating (Eas) is 350 mJ
a continuous drain current (ID) of 7.5A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 30A.
STP9NK80Z Applications
There are a lot of STMicroelectronics
STP9NK80Z applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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